97% (99.9%-Ce) (REO) [Ce(TMHD)4], Tris(cyclopentadienyl)cerium(III) (99.9%-Ce) (REO), Tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)cerium(III), 99% [Ce(FOD)3], Tris(i-propylcyclopentadienyl)cerium(III) (99.9%-Ce) (REO), Tris(1,2,3,4-tetramethyl-2,4-cyclopentadienyl)cerium(III) (99.9%-Ce) (REO), Chromium(II) chloride, anhydrous (99.99%-Cr) PURATREM, Bis(cyclopentadienyl)chromium, min.

Copyright © 1998 Elsevier Science S.A. All rights reserved.

Stable under N2 or Ar in sealed container and decomposes quickly in contact with moist air. 98%, 73-0700, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD, Pentakis(dimethylamino)tantalum(V), min 98% PDMAT, Tantalum(V) n-butoxide (99.99+%-Ta) PURATREM, Tantalum(V) chloride, anhydrous (99.9%-Ta), Tantalum(V) chloride, resublimed (99.99+%-Ta) PURATREM, Tantalum(V) ethoxide (99.99+%-Ta) PURATREM, Tantalum(V) ethoxide (99.9999%-Ta) PURATREM, Tantalum(V) methoxide (99.99+%-Ta) PURATREM, Tantalum(V) (tetraethoxy)(acetylacetonate) (99.99+%-Ta) PURATREM, Tantalum(V) (tetraethoxy)[BREW] (99.99+%-Ta) PURATREM, Terbium(III) acetylacetonate trihydrate (99.9%-Tb) (REO), Terbium(III) chloride, anhydrous (99.9%-Tb) (REO), Tris(i-propylcyclopentadienyl)terbium (99.9%-Tb) (REO), Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)terbium(III), 99% (99.9%-Tb) (REO) [Tb(TMHD)3], Cyclopentadienylthallium, 99% (99.9%-Tl) sublimed, 2,2,6,6-Tetramethyl-3,5-heptanedionatothallium(I), 99% [Tl(TMHD)], Thallium(I) hexafluoroacetylacetonate, 99% (99.9%-Tl), Thulium(III) acetylacetonate trihydrate (99.9%-Tm) (REO), Tris(cyclopentadienyl)thulium (99.9%-Tm) (REO), Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)thulium(III), 98% (99.9%-Tm) (REO) [Tm(TMHD)3], Bis(N,N'-di-i-propylacetamidinato)tin(II), 99%, Tin(IV) chloride, anhydrous (99.99-Sn%) PURATREM, N,N'-Di-t-butyl-2,3-diamidobutanetin(II), 98%, N,N'-Di-t-butyl-2,3-diamidobutanetin(II), 98%, 50-1150, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD, Tetrakis(dimethylamino)tin(IV), 99% (99.99%-Sn) TDMASn PURATREM, Tetrakis(dimethylamino)tin(IV), 99% (99.99%-Sn) TDMASn PURATREM, 50-1815, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD, Tin(II) hexafluoroacetylacetonate (99.9%-Sn), Tetrakis(dimethylamino)titanium(IV), 99% TDMAT (99.99%-Ti) PURATREM, Tetrakis(ethylmethylamino)titanium, 99% (99.99%-Ti) PURATREM, Cyclopentadienyl(cycloheptatrienyl)titanium(II), 99%, Pentamethylcyclopentadienyltitanium trimethoxide, min. 98%, Bis(N-t-butyl-N'-ethylpropanimidamidato)cobalt(II), min. View our wide range of ALD precursors and CVD precursors. Potassium 2,2,6,6-tetramethylheptane-3,5-dionate, K(thd), K(tmhd), K(dpm), C11H19KO2, 1. "• 30 g/L at 20 °C Medium: tert-butyl alcohol • 70 g/L at 20 °C Medium: Toluene • 130 g/L at 20 °C Medium: Hexane • 380 g/L at 20 °C Medium: Tetrahydrofuran • 50 g/L at 20 °C Medium: xylene • 110 g/L at 20 °C Medium: octane • 220 g/L at 20 °C Medium: Diethyl ether • 450 g/L at 20 °C Medium: Dimethylformamide, Potassium-niobium hexakis(ethoxide), KNb(OEt), Sublimes at temperature of 220 °C at pressure of 1 Torr.
The principle of MOCVD is to realise the contact between volatile compound material to be deposited and a substrate heated under vacuum. Khim. The early MOCVD tools were built in-house, and were used to grow III-V materials on substrates. Decomposes at 300 °C; stable under N2 or Ar in sealed container and decomposes slowly in contact with moist air and violently in contact with water. 98% (99.999%-Co) PURATREM, Bis(cyclopentadienyl)cobalt(II), min. This includes metals and different multi-component materials such as semiconductor and intermetallic compounds as well as carbides, nitrides, oxides, borides, silicides and chalcogenides. 98%, 93-2216, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD, (Trimethyl)pentamethylcyclopentadienyltitanium(IV), min. 97%, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)titanium(III), min. 98% [Mg(TMHD)2] , 12-0900, contained in high-temp 50 ml Swagelok® cylinder (96-1071) for CVD/ALD, Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)magnesium dihydrate, min. This is a list of prominent precursor complexes synthesized thus far with suited properties to be utilized for MOCVD processes. Please reconnect. Since several years metal-organic compounds are widely used as molecular precursors for the chemical vapor deposition process (MOCVD). (99.999+%-Al) PURATREM, Trimethylaluminum, elec. Your Mendeley pairing has expired. 98%, Bis(pentamethylcyclopentadienyl)nickel, 98% (Decamethylnickelocene), Bis(i-propylcyclopentadienyl)nickel, min.

CAS #: 4419-47-0, Tetrakis(diethylamino)zirconium Soluble in organic solvents. Valerie Briois, Christine Giorgetti, Elisabeth Dartyge, Francois Baudelet, Miriam S. Tokumoto, Sandra H. Pulcinelli, Celso V. Santilli. Cette technique de croissance est particulièrement prisée dans l'industrie des semi-con… 98%, 12-0510, contained in high-temp 50 ml Swagelok® cylinder (96-1071) for CVD/ALD, Bis(pentamethylcyclopentadienyl)magnesium, elec. The success of this method is mainly due to its adaptability and to the increasing interest for the low temperature deposition processes.

98% Co(iPr-MeAMD)2, Cobalt carbonyl (Dicobalt octacarbonyl) (Stabilized with 1-5% hexanes), Cyclopentadienylcobalt dicarbonyl, min. Sigma-Aldrich provides high quality purified precursors for research in semiconductor development and fabrication by ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition).
97%, Bis(pentamethylcyclopentadienyl)dimethylzirconium(IV), 99%, Dimethylbis(t-butylcyclopentadienyl)zirconium, min. 98%, Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II), min. 1953, 8b,(b) Fischer, E. O.; Hafner, W.; Stahl, H. O.


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